Physics and high background conditions set very challenging requirements on readout speed, material budget and resolution for the innermost layer of the SuperB Silicon Vertex Tracker operated at the full luminosity. Monolithic Active Pixel Sensors (MAPS) are very appealing in this application since the thin sensitive region allows grinding the substrate to tens of microns. Deep N-Well MAPS, developed in the ST 130 nm CMOS technology, achieved in-pixel sparsification and fast time stamping. Further improvements are being explored with an intense R&D program, including both vertical integration and 2D MAPS with the INMAPS quadruple well. We present the results of the characterization with IR laser, radioactive sources and beam of several chips produced with the 3D (Chartered/Tezzaron) process. We have also studied prototypes exploiting the features of the quadruple well and the high resistivity epitaxial layer of the INMAPS 180 nm process. Promising results from an irradiation campaign with neutrons on small matrices and other test-structures, as well as the response of the sensors to high energy charged tracks are presented. © 2013 Elsevier B.V.

Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT

BERRA, ALESSANDRO JOSE' FRANCESCO;LIETTI, DANIELA;PREST, MICHELA;
2013-01-01

Abstract

Physics and high background conditions set very challenging requirements on readout speed, material budget and resolution for the innermost layer of the SuperB Silicon Vertex Tracker operated at the full luminosity. Monolithic Active Pixel Sensors (MAPS) are very appealing in this application since the thin sensitive region allows grinding the substrate to tens of microns. Deep N-Well MAPS, developed in the ST 130 nm CMOS technology, achieved in-pixel sparsification and fast time stamping. Further improvements are being explored with an intense R&D program, including both vertical integration and 2D MAPS with the INMAPS quadruple well. We present the results of the characterization with IR laser, radioactive sources and beam of several chips produced with the 3D (Chartered/Tezzaron) process. We have also studied prototypes exploiting the features of the quadruple well and the high resistivity epitaxial layer of the INMAPS 180 nm process. Promising results from an irradiation campaign with neutrons on small matrices and other test-structures, as well as the response of the sensors to high energy charged tracks are presented. © 2013 Elsevier B.V.
2013
CMOS MAPS; DNW MAPS; INMAPS; Particle tracking; Instrumentation; Nuclear and High Energy Physics
Balestri, G.; Batignani, G.; Beck, G.; Bernardelli, A.; Berra, ALESSANDRO JOSE' FRANCESCO; Bettarini, S.; Bevan, A.; Bombelli, L.; Bosi, F.; Bosisio, ...espandi
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11383/2045345
 Attenzione

L'Ateneo sottopone a validazione solo i file PDF allegati

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact