Emission by 120-GeV positrons in the channeling regime in the (011) plane of a silicon single crystal has been considered. Trajectories of positrons under different initial conditions have been calculated within the theory of nonlinear oscillations. The amplitude distribution function of channeled particles has been determined taking into account the nonlinearity of their motion. The intensity of radiation under various initial conditions has been calculated by two different methods. These results can be useful for comparison with experimental data at energies of positrons beginning with 100 GeV and higher.
Emission of photons by positrons channeled in single crystals near an energy of 100 GeV
PREST, MICHELA;
2016-01-01
Abstract
Emission by 120-GeV positrons in the channeling regime in the (011) plane of a silicon single crystal has been considered. Trajectories of positrons under different initial conditions have been calculated within the theory of nonlinear oscillations. The amplitude distribution function of channeled particles has been determined taking into account the nonlinearity of their motion. The intensity of radiation under various initial conditions has been calculated by two different methods. These results can be useful for comparison with experimental data at energies of positrons beginning with 100 GeV and higher.
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