This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300- mu ext{m} -thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 imes 24 array of pixels with 50- mu ext{m} pitch, have been shown to be fully functional when operating in the full depletion mode. Characterization results obtained with a proton microbeam and a 55Fe radiation source are presented and discussed.

Fully Depleted MAPS in 110-nm CMOS Process With 100-300-μm Active Substrate

Santoro, Romualdo;Caccia, Massimo;
2020

Abstract

This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300- mu ext{m} -thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 imes 24 array of pixels with 50- mu ext{m} pitch, have been shown to be fully functional when operating in the full depletion mode. Characterization results obtained with a proton microbeam and a 55Fe radiation source are presented and discussed.
CMOS; Monolithic active pixel sensor (MAPS); Radiation detector; Silicon
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11383/2094016
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