Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202 +/- 55% W-1 cm(-2) is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics. (C) 2019 Optical Society of America

Second-harmonic generation in AlGaAs-on-insulator waveguides

Clerici M;
2019-01-01

Abstract

Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202 +/- 55% W-1 cm(-2) is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics. (C) 2019 Optical Society of America
2019
May, S; Kues, M; Clerici, M; Sorel, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11383/2165603
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