Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202 +/- 55% W-1 cm(-2) is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics. (C) 2019 Optical Society of America

Second-harmonic generation in AlGaAs-on-insulator waveguides

Clerici M;
2019-01-01

Abstract

Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202 +/- 55% W-1 cm(-2) is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics. (C) 2019 Optical Society of America
2019
May, S; Kues, M; Clerici, M; Sorel, M
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11383/2165603
 Attenzione

L'Ateneo sottopone a validazione solo i file PDF allegati

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 33
  • ???jsp.display-item.citation.isi??? 27
social impact