We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-μm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
Clerici M.;
2018-01-01
Abstract
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-μm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
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