We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-μm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.

Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection

Clerici M.;
2018-01-01

Abstract

We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-μm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
2018
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
2018 Conference on Lasers and Electro-Optics, CLEO 2018
usa
2018
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11383/2172370
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