The paper concerns the development of a novel monolithic silicon pixel detector, which exploits Silicon on Insulator substrates for the integration of the readout electronics and pixel detector. In the discussed solution, the readout CMOS circuit is manufactured in the thin device layer over the buried oxide while the pixel matrix is created in the high resistive handle wafer of the SOI substrate. Small test matrices of the SOI sensor have been recently manufactured and preliminary tests with an infrared laser light and a radioactive source indicated the sensor sensitivity for the ionizing radiation. The concept and design of the SOI detector together with the preliminary measurement results of the sensor matrices are addressed in the paper.

Monolithic active pixel detector realized in silicon on insulator technology

CACCIA, MASSIMO;
2004

Abstract

The paper concerns the development of a novel monolithic silicon pixel detector, which exploits Silicon on Insulator substrates for the integration of the readout electronics and pixel detector. In the discussed solution, the readout CMOS circuit is manufactured in the thin device layer over the buried oxide while the pixel matrix is created in the high resistive handle wafer of the SOI substrate. Small test matrices of the SOI sensor have been recently manufactured and preliminary tests with an infrared laser light and a radioactive source indicated the sensor sensitivity for the ionizing radiation. The concept and design of the SOI detector together with the preliminary measurement results of the sensor matrices are addressed in the paper.
Position silicon detector; Pixel detector
Bulgheroni, A.; Caccia, Massimo; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Klatka, T.; Kociubinski, A.; Koziel, M.; Kucewicz, W.; Kucharski, K.; Kuta, S.; Marczewski, J.; Niemiec, H.; Sapor, M.; Szelezniak, M.; Tomaszewski, D.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11383/9505
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