The control of thermal fluxes - magnitude and direction - in mesoscale and nanoscale electronic circuits can be achieved by means of heat rectification using thermal diodes in two-terminal systems. The rectification coefficient R, given by the ratio of forward and backward heat fluxes, varies with the design of the diode and the working conditions under which the system operates. A value of R≪1 or

Voltage-amplified heat rectification in SIS junctions

Khomchenko I.
Primo
;
Benenti G.
Ultimo
2022-01-01

Abstract

The control of thermal fluxes - magnitude and direction - in mesoscale and nanoscale electronic circuits can be achieved by means of heat rectification using thermal diodes in two-terminal systems. The rectification coefficient R, given by the ratio of forward and backward heat fluxes, varies with the design of the diode and the working conditions under which the system operates. A value of R≪1 or
2022
2022
Khomchenko, I.; Ouerdane, H.; Benenti, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11383/2144771
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